The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 1985
Filed:
Sep. 24, 1982
Yoshihide Nagakubo, Kawasaki, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
The invention provides a method for manufacturing a semiconductor device, having the steps of: forming a first mask member which has an opening to expose a desired portion of one major surface of a semiconductor substrate; doping an impurity which has the same conductivity type as that of the semiconductor substrate through the opening of the first mask member to form an impurity region of a high concentration in the surface layer of the semiconductor substrate; forming a second mask member on the side surface of the opening of the first mask member while the first mask member is left as it is; forming a groove by selectively etching the semiconductor substrate using the first and second mask members, and at the same time leaving an impurity region of the high concentration at least on the side surface of the groove; and burying an insulating isolation material in the groove.