Associative memory

Abstract

An associative memory comprises memory cells arrayed in columns and rows, a pair of complementary bit lines disposed for each column of the memory cells, a word line disposed for each row of the memory cells, and a sense line disposed also for each row of the memory cells. Each memory cell includes a bistable circuit provided by a pair of cross-coupled inverters, a pair of first switching elements connected between the two nodal points of the bistable circuit and the bit lines respectively to be controlled depending on the potential of the word line, and a pair of second switching elements and a pair of diodes or like circuit elements having a rectifying characteristic connected in series between the bit lines and the sense line respectively. These second switching elements are controlled depending on the potentials of the two nodal points respectively in the bistable circuit. A load element, a sensing amplifier and a tri-state driver circuit are connected to the sense line. An input reference data bit pattern is applied in complementary fashion to the bit lines, and coincidence or non-coincidence between the input reference data and the stored data is discriminated by checking the output of the sensing amplifier connected to each sense line.