The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1985
Filed:
Mar. 12, 1982
Applicant:
Inventor:
Frank Z Hawrylo, Trenton, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 30 ; 357 63 ; 357 67 ; 372 44 ; 372 45 ;
Abstract
An indium phosphide semiconductor layer or layers are simultaneously doped with groups II-VI elements such as zinc and selenium. These simultaneously (acceptor/donor) doped layers offer improved characteristics when used as an ohmic contact capping layer of indium phosphide or as the active laser region in long wavelength light emitting diodes composed of indium phosphide. The simultaneous doping is achieved through the use of liquid phase epitaxy.