The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1985
Filed:
Oct. 09, 1984
Roland L Chin, Williamsville, NY (US);
Susan A Ferguson, W. Seneca, NY (US);
Allied Corporation, Morris Township, Morris County, NJ (US);
Abstract
A method is disclosed for the synthesis of ultra-thin silicon nitride (Si.sub.x N.sub.y) films by the direct interaction of a low energy noble ion beam (e.g. Ar.sup.+ or He.sup.+), with NH.sub.3 physically absorbed on a silicon surface. The method is directed toward applications which require the use of ultra-thin insulating layers, such as in MIS technology. The disclosed method provides for the synthesis of ultra-thin films of silicon nitride via the interaction of NH.sub.3 absorbed on a silicon substrate and a low energy nobel ion beam. Preferential absorption of NH.sub.3 is effected by cooling of the substrate below the boiling point of NH.sub.3. The ion beam is used to generate reactive N and Si species which combine to form compounds of silicon nitride. The physical appearance of the films formed by this method is comparable to those produced by low pressure chemical vapor deposition.