The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1985
Filed:
Aug. 12, 1983
Applicant:
Inventors:
Donald R Bradbury, Palo Alto, CA (US);
Chi-Wing Tsao, Piedmont, CA (US);
Theodore I Kamins, Palo Alto, CA (US);
Assignee:
Hewlett-Packard Company, Palo Alto, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 29578 ; 148174 ; 148D / ; 148D / ; 148D / ; 156610 ; 156612 ; 156613 ; 156614 ; 427 86 ;
Abstract
A method for growing Silicon On Insulator (SOI) films using only conventional very large scale integration (VLSI) techniques is provided. By sequentially varying the flow of HCL gas during the vertical-growth, lateral-overgrowth, coalescence, and planarization stages of the epitaxial deposition process allows the formation of high-quality SOI films on wider oxide stripes suitable for general transistor applications.
Bradbury, Donald. (1985). Cvd lateral epitaxial growth of silicon over insulators (U.S. Patent No. 4522662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4522662
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile