The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 1985

Filed:

Aug. 13, 1984
Applicant:
Inventors:

Hideki Hayashi, Osaka, JP;

Kenichi Kikuchi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 50 ; 357 17 ; 357 22 ;
Abstract

A semiconductor device composed of a transistor for modulation and a semiconductor laser as one body, in which on the uppermost layer of a semiconductor laser composed of a multilayer epitaxial wafer, there is provided a layer consisting of a semiconductor of different conductivity type from that of the uppermost layer and having a V-shaped groove filled with a semiconductor zone of the same conductivity type as that of the uppermost layer, and ohmic electrodes are provided on the back surface of the substrate of the semiconductor laser, the semiconductor layer of different conductivity type and the semiconductor zone of the same conductivity type.


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Hayashi, Hideki. (1985). Semiconductor device integrating a laser and a transistor (U.S. Patent No. 4521888). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4521888

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