The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1985
Filed:
Feb. 01, 1984
Applicant:
Inventor:
Andrew J Purdes, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C23F / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156657 ; 1566591 ; 156662 ; 2041 / ; 252 791 ; 427 38 ;
Abstract
A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl.sub.3 has Br.sub.2 added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr.sub.4. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-Cl-Br compound. The Br which adsorbs on the sidewalls of the etched silicon protects them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon.