The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1985
Filed:
Feb. 27, 1984
Kazuhiro Arai, Yokohama, JP;
Abstract
A method of manufacturing a metal semiconductor field-effect transistor (MESFET) by controlling implanted peak surface dopants, is provided which comprises the steps of selectively ion-implanting an impurity in the surface of a semi-insulating substrate made of a compound selected from the group consisting of GaAs and InP performing a first ion implantation of the impurity into a portion of the surface of the semi-insulating substrate, removing that portion of the second impurity ion injection layers which extends from its surface to a depth corresponding to the vicinity of the peak value of the impurity concentration distribution, performing a second ion implantation of the impurity at least once from the surface of the remaining second impurity ion injection layers, and annealing to activate the first and second impurity ion injection layers to form the active layer on the surface and drain regions at the surface of the semi-insulating substrate and the ends of the active layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile