The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 1985

Filed:

Nov. 12, 1981
Applicant:
Inventor:

Ronald L Schlupp, Los Gatos, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 15 ; 357 51 ; 357 53 ; 357 67 ;
Abstract

A merged platinum silicide fuse and Schottky diode structure and method of manufacturing the merged structure is presented. The merged structure is formed by an insulating layer having an aperture over a silicon substrate. A shaped layer of polysilicon lies on the insulating layer and contacts the substrate through the aperture; a layer of platinum silicide in the same shape as the polysilicon layer covers the polysilicon layer. The region of polysilicon - PtSi layers over the substrate contact forms a Schottky diode and the region on the insulating layer forms the fuse. This merged structure has superior Schottky diode electrical characteristics and is more compact compared to prior art structures.


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