The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 1985

Filed:

Oct. 31, 1983
Applicant:
Inventor:

Paul J Shlichta, San Pedro, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156621 ; 156D / ; 156D / ; 422245 ;
Abstract

Disclosed is a method and apparatus for growing in a gravitational field a microscopic crystal from a solution. Solution is held in a vertical chamber which is relatively thin, the thin dimension being generally perpendicular to the vertical. There is a substrate crystal disposed at either the upper or lower end of the chamber and the crystal grows from this substrate crystal in one direction. In accordance with this invention, the temperature conditions of the solution are controlled so that as the crystal forms the effects of buoyant convection within the solution are minimized. This is accomplished in two different ways depending upon whether the crystal is grown from the upper or lower end of the chamber. When grown from the upper end of the chamber, the temperature of the solution is controlled so that it remains essentially isothermal so that there is essentially no heat loss from the solution. When the crystal is grown from the lower end of the chamber, the temperatures of the solution is controlled so that there is a differential in temperature throughout the solution which provides a positive thermal gradient within the chamber.


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