The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 1985
Filed:
Jan. 23, 1981
Applicant:
Inventors:
Chin-An Chang, Peekskill, NY (US);
Leroy L Chang, Goldens Bridge, NY (US);
Leo Esaki, Chappaqua, NY (US);
Assignee:
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156610 ; 148175 ; 427 87 ; 156D / ;
Abstract
Misfit dislocation density at an InAs-GaAs interface is reduced in both I-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.