The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1985
Filed:
Jun. 09, 1980
Peter W Shackle, Bridgewater, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A gated diode switch (GDS1, GDS3, GDS4, GDS10) requires a voltage applied to the gate which is more positive than that of the anode and cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must flow into the gate of the switch to break current flow. The use of a second gated diode switch (GDS2, GDS20) coupled by the cathode (28, 280) to the gate of a gated diode switch (GDS1, GDS3, GDS4, GDS10) which is to be controlled provides a high voltage and current capability means for cutting off (interrupting) or inhibiting current flow through the gated diode switch (GDS1, GDS3, GDS4, GDS10). The state of a gated diode switch (GDS1, GDS3, GDS4, GDS10) is thus controlled by a second gated diode switch (GDS2, GDS20). The state of the second gated diode switch (GDS2, GDS20) is controlled by a circuitry (A, A0) consisting of an n-p-n transistor (Q1, Q10), at least one p-n-p transistor (Q2, Q20), and at least one diode (D2, D20, D3, D4).