The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1985
Filed:
Dec. 23, 1982
Applicant:
Inventor:
Somnath Bhattacharya, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 71 ; 357 67 ;
Abstract
Contact metallurgy is disclosed for passivated semiconductor devices. The metallurgy comprises a compressively stressed, oxygen-containing titanium underlayer covered by a solder-bondable layer extending through via holes in dielectric material on the semiconductor device. The solder bondable layer is either nickel or ruthenium, where lower current densities are encountered or a composite of layers of copper, titanium, copper and gold for higher current densities.