The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 1985
Filed:
May. 21, 1981
Gerard Nuzillat, Paris, FR;
Georges Bert, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
In the field of large-scale-integrated digital GaAs circuits, a high-entrance high-speed logical operator utilizing so-called 'quasi-normally-off' Schottky-gate field-effect transistors (MESFETS) having a low threshold voltage. By means of a single very-high-speed logic gate, the operator thus performs AND - NAND - OR functions by utilizing in an input branch a saturable resistive load in series with a pair of quasi-normally-off MESFET's each having a maximum of two Schottky gates, the drains of the transistors being connected to an output transistor of the same type. Two identical portions of circuit are mounted in parallel with an output half-branch comprising a diode in series with another saturable resistive load.