The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1985
Filed:
Apr. 12, 1983
Applicant:
Inventors:
Arrigo Addamiano, Alexandria, VA (US);
Philipp H Klein, Washington, DC (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 2957 / ; 29580 ; 148D / ; 148D / ; 148D / ; 156610 ; 156612 ; 156D / ; 156D / ; 156D / ;
Abstract
A method of recovering intact at room temperature a layer of a first material, such as silicon carbide, produced by depositing it from the gas phase at a deposition temperature above room temperature on a substrate of a second material, such as silicon, having a different coefficient of thermal expansion than that of the first material. The substrate is separated from the layer prior to cooling, and then the separated layer is cooled to room temperature free of stresses otherwise present as a result of the different thermal expansions of the substrate and layer.