The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1985
Filed:
Nov. 21, 1983
Applicant:
Inventors:
Anthony D Kurtz, Englewood, NJ (US);
Timothy A Nunn, Ridgewood, NJ (US);
Joseph R Mallon, Franklin Lakes, NJ (US);
Assignee:
Kulite Semiconductor Products, Inc., Ridgefield, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; G01L / ;
U.S. Cl.
CPC ...
29571 ; 2961 / ; 2957 / ; 338-4 ; 338-5 ; 357 26 ; 357 91 ; 148D / ;
Abstract
A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top surface of the wafer to enable the etching or formation of a desired gage pattern.