The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1985
Filed:
Feb. 10, 1984
Masaki Kajita, Hatano, JP;
Tomio Nakaya, Yokohama, JP;
Shinichi Hasegawa, Tsuchiura, JP;
Hisanori Fujita, Tsuchiura, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Mitsubishi Monsanto Chemical Co., Ltd., Tokyo, JP;
Abstract
An epitaxial wafer of a compound semiconductor comprising a single crystalline semiconductor substrate consisting of GaP and an active layer consisting of GaAs.sub.1-x P.sub.x, having a mixed crystal ratio (x) in the range of from 0.5 to 1 is used for an LED. According to the present invention, between the single crystalline semiconductor substrate and the active layer, a light-absorbing layer consisting of GaAs.sub.1-x P.sub.x having the mixed crystal ratio (x) smaller than that of the active layer, is formed to suppress the reflection of light from the surface of the substrate.