The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1985
Filed:
Jun. 24, 1983
Applicant:
Inventors:
Peter D Greene, Harlow, GB;
Stephen E Turley, Harlow, GB;
Assignee:
International Standard Electric Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 2956 / ; 2957 / ; 148172 ;
Abstract
A method of making a channel substrate buried heterostructure InP/(In,Ga)(As,P) laser avoids the need to use two separate stages of epitaxial growth by using a channel in a (100) surface substrate 1 extending in the [011] direction with {111}B sides. This allows the channel to be made before the growth of an (In,Ga)(As,P) blocking layer 3 which can be grown under conditions which do not require the use of a mask to prevent nucleation on the channel sides. The same technique is also applicable to the manufacture of a terraced substrate laser incorporating a blocking layer.