The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 1985

Filed:

Apr. 07, 1982
Applicant:
Inventors:

Jun-ichi Umeda, Hachioji, JP;

Hisao Nakashima, Tokorozawa, JP;

Takashi Kajimura, Hachioji, JP;

Takao Kuroda, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 50 ; 357 17 ; 372 45 ;
Abstract

A semiconductor laser device is provided with a semiconductor substrate and at least a semiconductor assembly for optical confinement formed on the substrate which includes an active layer and cladding layers. A first electrode is disposed on the semiconductor assembly and a second electrode is disposed on the semiconductor substrate. To provide a phase-locked semiconductor laser device of high quality, a plurality of regions are provided in the semiconductor assembly which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting with a traveling direction of the laser beam. These regions can be discretely disposed over or under the active layer and give rise to a nonlinear interaction between adjacent laser emission regions formed by the plurality of regions.


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