The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 1985
Filed:
Dec. 20, 1982
Karen A Fabricius, Newburgh, NY (US);
Bernard M Kemlage, Kingston, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for making a monocrystalline integrated circuit structure is described. The monocrystalline silicon body is provided. There is formed thereon a layered structure of silicon dioxide, polycrystalline silicon and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form an oxide isolation pattern within the monocrystalline silicon body. If it is desired to form a semi-recessed oxide isolation there will be no etching of the monocrystalline silicon body in the openings. Should it be desired to form a full recessed oxide isolation there is etching of the monocrystalline silicon to a desired depth to form a substantially planar top surface of the monocrystalline with the recessed dielectric oxide isolation. The body is then oxidized until the desired oxide isolation pattern penetrates to the desired depth within the silicon body.