The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 1985
Filed:
Jun. 24, 1983
Applicant:
Inventor:
Satoshi Shinozaki, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29571 ; 2957 / ; 29578 ; 29590 ; 148-15 ; 148187 ; 148175 ; 156657 ; 357 51 ;
Abstract
A groove having a semiconductor layer buried therein is formed on one main surface of a semiconductor substrate, said groove providing a region for separating adjacent semiconductor elements. In the first step, a groove is formed on the substrate surface, followed by depositing a semiconductor layer thick enough to fill the groove. A substantial difference in impurity concentration is provided between the semiconductor layer within the groove and the other region of the semiconductor layer. The semiconductor layer is selectively allowed to remain within the groove by utilizing the difference in impurity concentration.