The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1985
Filed:
Feb. 01, 1983
Maruyama Kazumi, Yokosuka, JP;
Uchida Yoshiyuki, Yokosuka, JP;
Fuji Electric Co., Ltd., both of, JP;
Fuji Electric Corporate Research & Development Co., Ltd., both of, JP;
Abstract
In the typical embodiment of the invention described herein, a photoelectronic conversion device comprises a transparent insulative substrate, a first transparent electrode layer of Sn-incorporated In.sub.2 O.sub.3 having a relatively low sheet resistance and a thickness of about 1000 .ANG., a second transparent electrode layer of SnO.sub.2 having a relatively high plasma resistance and a thickness of several tens to several hundreds of Angstroms, an amorphous semiconductor film formed by a plasma CVD process at a substrate temperature of about 200.degree.-250.degree. C., and a metal electrode.