The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1985
Filed:
Aug. 24, 1981
Jun-ichi Nishizawa, Komegafukuro Sendai, JP;
Tadahiro Ohmi, Komegafukuro Sendai, JP;
Abstract
This invention relates to a GaAs semiconductor device and more particularly to a GaAs static induction transistor integrated circuit which operates at a very high speed. Gallium arsenide has the features that the mobility of electrons is higher than that in silicon and that the band structure has a direct gap. The mobility of electrons in gallium arsenide is several times as high as that in silicon; this is very suitable for the manufacture of a semiconductor device of high-speed operation. Further, since gallium arsenide has the direct gap, the electron-hole recombination rate is high and the minority carrier storage effect is extremely small. By causing the recombination at the direct gap, light emission can be achieved more efficiently. Accordingly, a light receiving and emitting semiconductor device can be obtained through the use of gallium arsenide. As the propagation velocity of light is very fast, signal transfer between semiconductor chips can be achieved at ultra-high speed. By combining this with the high mobility of electrons in gallium arsenide, an ultra-high speed logical operation device can be realized.