The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 1985
Filed:
Sep. 13, 1983
Applicant:
Inventor:
Yoshihisa Mizutani, Tokyo, JP;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 2311 ; 357 2312 ; 357 234 ; 357 231 ; 357 91 ; 357 64 ; 357 88 ;
Abstract
A metal-oxide-semiconductor device comprising source and drain regions formed in the surface region of a semiconductor substrate, and a gate electrode formed on an insulation layer on the channel region between the source and drain regions. The drain region includes an upper layer and a lower layer having an impurity concentration higher than that of the upper layer.