The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 1985

Filed:

Nov. 24, 1982
Applicant:
Inventor:

Mitsuo Higuchi, Tokyo, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
307264 ; 307270 ; 307279 ; 307475 ; 307585 ;
Abstract

A semiconductor device includes a first circuit (C1, C1') driven by a first power supply (V.sub.cc) and a second circuit (C2) driven by a second power supply (V.sub.pp) which has a higher potential than the first power supply. A P-channel transistor (Q.sub.18) is provided on the input side of the second circuit and is controlled by the feedback of an output of the second circuit. The P-channel transistor has a source connected to the second power supply. In addition, two N-channel transistors (Q.sub.19, Q.sub.20) are connected in series between the output of the first circuit and the input of the second circuit. Each of the N-channel transistors has a gate, connected to the first power supply and the second power supply, respectively.


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