The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1985
Filed:
Jun. 28, 1984
Kiyoshi Miyasaka, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor integrated device with a high tolerance against abnormally high input voltages comprises a first MIS transistor at the input stage and a second MIS transistor of the internal elements of the device. The source of the first MIS transistor is connected to an input electrode. The drain of the first MIS transistor is connected to the gate of the second MIS transistor. The source region of the first MIS transistor comprises phosphoric atoms. The other diffusion regions comprise arsenic atoms. Therefore, the depth of the source region of the first MIS transistor is greater than the other diffusion region. In addition, the source region of the first MIS transistor has a considerable gradient with regard to the concentration of the phosphoric atoms. As a result, the depletion layer between the source region of the first MIS transistor and the semiconductor substrate is broader than in the other region. Consequently, a high tolerance against abnormal high input voltages is obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile