The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1985
Filed:
Jul. 16, 1982
Gerald J Iafrate, Toms River, NJ (US);
Thomas A Aucoin, Ocean, NJ (US);
David K Ferry, Ft. Collins, CO (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its preferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons.