The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1985
Filed:
Aug. 29, 1983
Applicant:
Inventor:
Carl J Russo, Ipswich, MA (US);
Assignee:
Varian Associates, Inc., Palo Alto, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 55 ; 118641 ; 373110 ; 427 85 ; 4273722 ;
Abstract
A process for high temperature, rapid drive-in diffusion employs a planar blackbody source placed in parallel alignment with a semiconductor wafer in a vacuum processing chamber. The wafer is rapidly heated, preferably to a temperature in the range of 1100.degree. C. to 1300.degree. C. and primarily by radiation which promotes uniformity. Typical diffusions are completed in less than one minute. In order to control diffusion distance at elevated temperatures, the process time and source temperature are carefully controlled, and the peak wafer temperature is monitored.