The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 1985
Filed:
Nov. 18, 1983
Applicant:
Inventors:
George L Schnable, Lansdale, PA (US);
Chung P Wu, Mercerville, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29578 ; 148-15 ; 148175 ; 148187 ; 357 65 ; 357 91 ;
Abstract
The contact resistance between a layer of conductive material, such as a metal or conductive polycrystalline silicon, and either a body of single crystalline silicon or another layer of the conductive material is reduced by implanting ions of a neutral material through the conductive layer into either the silicon body or the other conductive layer. After the implantation of the neutral ions, the device is annealed.