Method of producing homogeneously doped hgcdte which contains a fast

Abstract

The disclosure relates to a method for making extrinsically doped HgCdTe alloys containing Cu, Ag, or Au or other dopant impurity whereby the excess tellurium in the core is annihilated (stoichiometrically compensated by excess in-diffusing Hg) and the dopant impurities are then permitted to randomly move through the slab to provide for homogeneity thereof. A post-annealing step of much greater than normal temperature-time length than was provided in the prior art is used. A standard post-annealing step in a saturated mercury vapor atomosphere leaves second phase tellurium (and gettered impurities) at the center of the slab, and longer term post-annealing negates this situation by annihilating the second phase tellurium in the slab and thus permitting the impurities to randomly travel by solid state diffusion throughout the slab to ultimately be distributed therein in a homogeneous manner. The additional time required for the post-annealing step following the normal prior art post-annealing step varies based upon slice or slab thickness, the metal-Te stoichiometry, and second post-annealing step temperature and, in general, will be longer but in the same range as that used in the prior post-annealing stage. Following annihilation of the second phase tellurium from the core, the impurity is homogenized in the slab by further annealing for from about one hour to about 20 weeks at a temperature under 300.degree. C., preferably 280.degree. C., by solid state diffusion.