The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1985
Filed:
Jun. 25, 1981
Applicant:
Inventors:
Assignee:
Licentia Patent-Verwaltungs-G.m.b.H., Frankfurt am Main, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 13 ; 357 51 ; 357 86 ;
Abstract
A thyristor with an amplifying gate including a silicon semiconductor body having n.sup.+ conductive main and auxiliary emitters at the cathode side, wherein a p.sup.+ zone is formed in a region of the p control base zone adjacent the surface of the semiconductor body between the auxiliary emitter zone and the main emitter zone. The p.sup.+ zone contacts the edge region of the main emitter zone which faces the auxiliary emitter zone, and preferably projects into the edge region, and forms a p.sup.+ n.sup.+ junction with the main emitter zone. Also, the p.sup.+ zone is laterally spaced from and does not contact the n.sup.+ auxiliary emitter zone.