The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 1985

Filed:

Oct. 19, 1982
Applicant:
Inventors:

Erwin Bretscher, Rapperswil, CH;

Peter Vettiger, Langnau am Albis, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
2504922 ; 250397 ;
Abstract

A system to improve the uniformness of patterns for LSI circuits or masks generated in an electron beam lithographic system uses a backscatter indicator signal to vary a control signal for the beam stepping rate proportional to the variations in the amount of backscattered electrons. This avoids non-uniformity such as line width variations which otherwise occur when the pattern to be generated covers border lines between two different substrate or base layer materials. Range setting circuitry is provided for adjusting, during an initial prescan of a sample of two materials having an extreme difference in their backscatter characteristic, the offset and the gain for the backscatter detector. During subsequent exposure of a wafer, the backscatter indicator signal and thus the stepping rate control signal variations remain within preselected limits.


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