The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1985
Filed:
Sep. 28, 1983
Tatsumi Hiramoto, Machida, JP;
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Disclosed herein is a deposition process which comprises, in an air-tight reaction vessel, generating a plasma through a discharge gas by means of a discharge system, disposing a substrate at a position apart from the plasma by a distance greater than the mean free path of species produced by the plasma in such a state that the substrate can be exposed directly to light radiated from the plasma, feeding a carrier gas and photoreactive gas in such a manner that they flow along the substrate, and causing the photoreactive gas to undergo a reaction by the light from the plasma to deposit the reaction product on the substrate. In the deposition process the substrate and a film deposited thereon are prevented from contamination or damage by charged particles. Electrodes are kept free from deposition of the reaction product, thereby allowing to conduct the deposition operation for a long period of time without need for cleaning them frequently.