The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 1985
Filed:
Sep. 14, 1983
Richard F Greene, Bethesda, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
An FET with an extremely short channel formed by the apex of a substrate ridge structure protruding upward through the channel layer toward a Schottky-barrier gate contact. The device is formed by etching a modulation-doped substrate to form an upwardly protruding ridge with the apex modulation-doped. A semiconductor layer is then disposed over the substrate surface with the protruding ridge to obtain an epitaxial interface therebetween. Source and drain regions are doped into the semiconductor layer on opposite sides of the ridge structure. Finally, ohmic contacts are formed on the semiconductor layer over the source and drain regions and a Schottky-barrier metalization is deposited on the semiconductor layer above the ridge structure. This device has a very short channel, a low transit time, a low gate capacitance, and an enhanced transconductance.