The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 1985

Filed:

Jul. 27, 1983
Applicant:
Inventors:

Franciscus A Vollenbroek, Eindhoven, NL;

Elisabeth J Spiertz, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430311 ; 430312 ; 430328 ; 430330 ; 430326 ;
Abstract

A method of manufacturing a semiconductor device in which a photosensitive lacquer layer is developed in a lye solution, and comprises a polymeric material and a sensitizer with a diazo group and a ketone group. This lacquer layer is formed on a substrate surface. After a patterning irradiation, but before development, the lacquer layer is subjected to an intermediate treatment comprising two irradiations. These irradiations result in that differences in solubility in lye are obtained in the direction of thickness in the parts of the lacquer layer which were not exposed during the patterning irradiation. In this manner, it is possible to realize lacquer patterns with different profiles.


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