The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 1985

Filed:

Dec. 20, 1982
Applicant:
Inventors:

Makoto Uehara, Tokyo, JP;

Satoru Anzai, Zama, JP;

Assignee:

Nippon Kogaku K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B / ;
U.S. Cl.
CPC ...
355 55 ; 35016216 ; 355 61 ; 356401 ;
Abstract

A projection type exposure apparatus has a projection objective lens, a projection negative having a predetermined shape pattern and an alignment mark, and a photosensitive plate having an alignment mark. The shape pattern of the projection negative is projected upon the photosensitive plate by the projection objective lens. Main illuminating optical means illuminates the projection negative with a first wavelength light to which the photosensitive plate is sensitive, and alignment optical means illuminates the projection negative with a second wavelength light to which the photosensitive plate is insensitive. The positional relation between the projection negative and the photosensitive plate is detected using the second wavelength light through the projection objective lens. One of the alignment mark on the projection negative and the alignment mark on the photosensitive plate has a zone pattern which forms a light-condensing point at a position spaced apart by a predetermined amount from the surface on which said one mark is formed, and said predetermined amount corresponds to the amount of chromatic aberration of the projection objective lens, at the side thereof adjacent to said zone pattern, for the second wavelength light relative to the first wavelength light.


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