Method of fabrication of monolithic integrated circuit structure

Abstract

A body of silicon has sectors of N-type and P-type covered by silicon oxide gate layers with adjacent regions covered by a thicker silicon oxide field layer. Gate members of N-type polycrystalline silicon are placed on the gate layers to define an N-type channel region in the N-type sector and a P-type channel region is the P-type sector. P-type conductivity imparting material is introduced into the remaining regions of the N-type sector to convert them to P-type source/drain regions with an intervening N-type channel region, and N-type conductivity imparting material is introduced into the remaining regions of the P-type sector to convert them to N-type source/drain regions with an intervening P-type channel region. The exposed silicon oxide is grown to a thicker field layer and a protective oxide is formed on the polycrystalline gate members. The source/drain regions are exposed and adherent contact members of polycrystalline silicon of N and P-type are formed in ohmic contact with the source/drain regions of N and P-type, respectively. The surfaces of the polycrystalline contact members are metallized thereby shorting out rectifying junctions between N and P-type contact members.