The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1985
Filed:
May. 17, 1982
Vernal M Benrud, Eagan, MN (US);
Sperry Corporation, New York, NY (US);
Abstract
A first feedback loop to a regulator transistor within the drain circuit of the input field effect transistor (FET) serves to maintain the voltage across the drain-gate junction of the input FET at a constant value consistent with FET operation as a source follower, thereby mitigating junction to junction capacitances within the FET. A second feedback loop created guard circuits on the cases of the input FET and the drain circuit regulator transistor, thereby mitigating junction to external circuitry capacitances. A third feedback loop modifies essentially constant current flow in the source circuit of the input FET in order to compensate for capacitance within that circuit. When utilized in compact form for microprobing of low voltage nanosecond rise time signals, the amplifier demonstrates an effective input capacitance of less than 0.5 picofarads.