The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 1985
Filed:
Jun. 30, 1982
Applicant:
Inventor:
William E Ham, Andover, MA (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
C23F / ;
U.S. Cl.
CPC ...
156643 ; 156649 ; 156653 ; 156D / ;
Abstract
A novel process is described for the removal of the objectionable point (tilt projection, appearing at the top of a silicon island). The process includes the formation of a thick insulating layer on the top surface of the island, etching the top and sides of the insulating layer to expose, at the least, the objectionable point and, thereafter, etching the objectionable point to produce a rounded edge.
Quick Actions:
Ham, William. (1985). Process for forming an improved silicon-on-sapphire device (U.S. Patent No. 4496418). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4496418
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile