The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1985
Filed:
Aug. 16, 1983
Applicant:
Inventor:
Helmut Herberg, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156652 ; 156656 ; 1566591 ; 427102 ; 427103 ; 430318 ;
Abstract
A method for the manufacture of metallized semiconductor components, particularly power semiconductor components such as thyristors in which the semiconductor substrate is covered with at least three metal layers including a base layer attached to the substrate, an intermediate layer, and an upper layer upon which the various photoresist compositions are located to define the electrode structures, the intermediate layer being composed of a metal which has different solubility characteristics than either the upper or lower metal layers so that the various layers can be selectively etched by means of suitable solvents.