The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 1985
Filed:
Feb. 28, 1984
Atsushi Shibata, Katsuta, JP;
Yukichi Ueno, Katsuta, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In an ion implantation system wherein an ion beam is scanned by deflection means in a predetermined direction on substrates placed on a disc rotating at a constant speed, to implant the substrates with ions; ion beam detectors are arranged in correspondence with a plurality of places of the substrate before the ion implantation. When the ion beam is scanned, sums of outputs of the respective ion beam detectors in the plurality of scanning positions are evaluated, and correction operations are executed so that they may become constant values. The scanning rate of the ion beam by the deflection means is controlled according to the corrections. Thus, when the ion beam is actually implanted into the substrate, the density of the ion beam becomes uniform.