The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 1985

Filed:

Jun. 01, 1982
Applicant:
Inventor:

Tadao Komeda, Ikoma, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 148188 ; 2957 / ; 29580 ;
Abstract

A method for manufacturing a semiconductor integrated circuit which comprises providing a semiconductor substrate, forming a recess in the substrate through a pattern of an oxidation-inhibiting film, forming a thin film of a material capable of being oxidizing into an insulating oxide such as silicon on the side and/or bottom surface of the recess, and oxidizing the thin film to fill up with the recess with the resulting oxide which increases in volume.


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