The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1985
Filed:
Jun. 21, 1982
Applicant:
Inventor:
William J Janutka, West Allis, WI (US);
Assignee:
Eaton Corporation, Cleveland, OH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307571 ; 307246 ; 307572 ; 307581 ;
Abstract
A fast turn-off MOSFET circuit is provided by a JFET in the gate circuit of the MOSFET which is connected to the same gate drive terminal as the MOSFET. The JFET becomes conductive upon turn-off of the MOSFET due to removal of gate drive. Conduction of the JFET provides faster discharge therethrough of residual stored charge on the MOSFET gate, whereby to facilitate faster MOSFET turn-off. A zener diode is connected in the gating circuitry and has a greater breakover voltage than the pinch-off voltage of the JFET, such that during turn-on, gate drive first pinches OFF the JFET and then charges up the MOSFET gate to drive the MOSFET into conduction.