The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1985
Filed:
Sep. 29, 1983
David P Tanner, Thousand Oaks, CA (US);
Atlantic Richfield Company, Los Angeles, CA (US);
Abstract
A process for forming microcrystalline silicon material includes the steps of introducing a silicon-containing gas, hydrogen gas and a relatively inert gas into a work environment to form a preselected gas atmosphere, and establishing a glow discharge through the gas atmosphere. A microcrystalline thin film of silicon is formed on a substrate exposed to the discharge. In a preferred embodiment, the power level of the discharge is less than 0.08 watts per square centimeter and the film is deposited at a rate of no more than approximately two angstroms per second. Under these circumstances, the material deposited on the substrate is bombarded by ions of the relatively inert gas, causing the material to form a microcrystalline thin film.