The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 1985

Filed:

Jun. 30, 1982
Applicant:
Inventor:

Ifay F Chang, Chappaqua, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
313392 ; 313395 ; 313397 ; 313398 ;
Abstract

A flat storage cathode ray tube with enhanced brightness is described. A mesh collector and a dielectric storage site array form an integral part of a silicon wafer. The silicon wafer includes thereon an addressable array of field effect transistors having a field effect transistor associated with a dielectric storage site in the storage site array for controlling a writing of the dielectric storage site. The addressable array of transistors works in cooperation with a flooding electron gun to effect selective writing of the storage site array. The enhanced brightness cathode ray tube may be adapted for use in a projection display.


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