The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1985
Filed:
Sep. 28, 1982
William J Janutka, West Allis, WI (US);
Eaton Corporation, Cleveland, OH (US);
Abstract
A bidirectionally source stacked FET circuit is provided with drain-referencing of the gating circuitry, instead of source-referencing. This requisite gate to source potential to charge the gate and effect conduction of the FETs is provided by referencing the gate circuitry to a common anode point of diodes having their cathodes connected to the drains of the FETs. The common anode point is at substantially the same potential as the common source point of the FETs. The gate charging potential is provided by current from a current source through a resistor to the common anode point, which IR drop establishes the requisite gate voltage to drive the corresponding FET into conduction regardless of the polarity of first and second main terminals at respective FET drains.