The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1984
Filed:
Sep. 14, 1981
Applicant:
Inventor:
Peter D Scovell, Chelmsford, GB;
Assignee:
ITT Industries, Inc., New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ;
Abstract
A process for isolating a semiconductor device formed in a p-type silicon substrate includes implanting a layer of oxygen ions below the device. The substrate is then heated to 430.degree.-470.degree. C. to activate the silicon/oxygen complexes thus formed and compensate or overcompensate the region thus forming an intrinsic or n-type isolating layer. The technique may be employed for the isolation of DMOS structures.