The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1984
Filed:
Mar. 30, 1983
Gerard M Martin, Paris, FR;
Sherif Makram-Ebeid, Limeil-Brevannes, FR;
Camille Venger, Montfermeil, FR;
U.S. Philips Corporation, New York, NY (US);
Abstract
The invention relates to a method of manufacturing field effect transistors of gallium arsenide obtained by ion implantation of light donors, such as silicon or selenium, in a semi-insulating substrate of gallium arsenide. In order to reduce out-diffusion of the deep level (EL.sub.2) responsible for parasitic phenomena in the operation of the transistors, the method is characterized in that in addition oxygen ions are implanted in at least the region of the substrate intended to form the channel region of the field effect transistor. After implantation, the substrate is sintered at a temperature between 600.degree. and 900.degree. C. in either an enveloping substance or uncovered, and/or in an atmosphere of arsine.