The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 1984
Filed:
Sep. 24, 1982
Applicant:
Inventor:
Hiroshi Shibata, Kanagawa, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 39 ; 156643 ; 1566591 ; 427 94 ; 427 96 ; 427259 ; 430314 ; 2041 / ;
Abstract
A pattern forming method for semiconductor devices in which a film layer of a compound containing silicon and nitrogen is formed between a substrate and a resist layer with a desired pattern readily formed utilizing a lift-off technique. A first film layer of a compound such as Si.sub.3 N.sub.4 is formed on a semiconductor substrate with a resist film layer formed in a desired pattern upon the first film layer. The first film layer is etched using the resist film layer as a mask. A second film layer is then formed on the substrate after which the first film layer is removed with an etchant which does not attack the second film layer.