The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1984
Filed:
Jan. 07, 1982
Applicant:
Inventors:
Vikram L Dalal, Lawrenceville, NJ (US);
M Akhtar, Lawrenceville, NJ (US);
Shek-Chung Gau, Hamilton Square, NJ (US);
Assignee:
Chronar Corporation, Princeton, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 85 ; 148174 ; 427 86 ; 427 87 ; 427 93 ;
Abstract
Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate using a hot-wall epitaxial reactor.